DMT6030LFDF-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 6.8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 6.5A, 10V
Power Dissipation (Max): 860mW (Ta), 9.62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 30 V
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Технічний опис DMT6030LFDF-13 Diodes Incorporated
Description: MOSFET N-CH 60V 6.8A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), Rds On (Max) @ Id, Vgs: 25.5mOhm @ 6.5A, 10V, Power Dissipation (Max): 860mW (Ta), 9.62W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 30 V.
Інші пропозиції DMT6030LFDF-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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DMT6030LFDF-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V U-DFN2020-6 T&R 10K |
товару немає в наявності |
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| DMT6030LFDF-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.4A; Idm: 40A; 1.76W Case: U-DFN2020-6 Mounting: SMD Kind of package: 13 inch reel; tape Polarisation: unipolar Gate charge: 9.1nC On-state resistance: 35mΩ Power dissipation: 1.76W Drain current: 5.4A Gate-source voltage: ±20V Kind of channel: enhancement Pulsed drain current: 40A Drain-source voltage: 60V Type of transistor: N-MOSFET |
товару немає в наявності |