DMT64M2LPSW-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 20.7A/100A PWRDI
Input Capacitance (Ciss) (Max) @ Vds: 2799 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI5060-8 (Type Q)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2500+ | 27.36 грн |
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Технічний опис DMT64M2LPSW-13 Diodes Incorporated
Description: MOSFET N-CH 60V 20.7A/100A PWRDI, Input Capacitance (Ciss) (Max) @ Vds: 2799 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerDI5060-8 (Type Q), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2.8W (Ta), 83.3W (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMT64M2LPSW-13 за ціною від 25.04 грн до 100.10 грн
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DMT64M2LPSW-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 20.7A/100A PWRDI Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V Power Dissipation (Max): 2.8W (Ta), 83.3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type Q) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2799 pF @ 30 V |
на замовлення 7412 шт: термін постачання 21-31 дні (днів) |
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DMT64M2LPSW-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V~60V PowerDI5060-8/SWP T&R 2.5K |
на замовлення 2085 шт: термін постачання 21-30 дні (днів) |
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| DMT64M2LPSW-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 20.7A/100A PWRDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2799 pF @ 30 V
Description: MOSFET N-CH 60V 20.7A/100A PWRDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2799 pF @ 30 V
на замовлення 7412 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 96.52 грн |
| 10+ | 59.35 грн |
| 100+ | 41.60 грн |
| 500+ | 30.77 грн |
| 1000+ | 28.05 грн |
| DMT64M2LPSW-13 |
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Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V~60V PowerDI5060-8/SWP T&R 2.5K
MOSFETs MOSFET BVDSS: 41V~60V PowerDI5060-8/SWP T&R 2.5K
на замовлення 2085 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 100.10 грн |
| 10+ | 62.35 грн |
| 100+ | 37.98 грн |
| 500+ | 30.52 грн |
| 1000+ | 27.85 грн |
| 2500+ | 25.04 грн |