DMT64M3SK3-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: IC
Input Capacitance (Ciss) (Max) @ Vds: 6019 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2500+ | 33.52 грн |
| 5000+ | 30.30 грн |
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Технічний опис DMT64M3SK3-13 Diodes Incorporated
Description: IC, Input Capacitance (Ciss) (Max) @ Vds: 6019 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 116W (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 131A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції DMT64M3SK3-13 за ціною від 34.81 грн до 124.21 грн
| Фото | Назва | Виробник | Інформація |
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DMT64M3SK3-13 | Diodes Incorporated |
Description: IC Input Capacitance (Ciss) (Max) @ Vds: 6019 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.8W (Ta), 116W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 131A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 289900 шт: термін постачання 21-31 дні (днів) |
|
| DMT64M3SK3-13 |
|
Виробник: Diodes Incorporated
Description: IC
Input Capacitance (Ciss) (Max) @ Vds: 6019 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: IC
Input Capacitance (Ciss) (Max) @ Vds: 6019 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 289900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 124.21 грн |
| 10+ | 76.03 грн |
| 100+ | 51.14 грн |
| 500+ | 37.95 грн |
| 1000+ | 34.81 грн |