Технічний опис DMT67M8LCGQ-7 Diodes Zetex
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 12.8A; Idm: 256A; 2.2W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 12.8A, Pulsed drain current: 256A, Power dissipation: 2.2W, Case: V-DFN3333-8, Gate-source voltage: ±20V, On-state resistance: 8.1mΩ, Mounting: SMD, Gate charge: 37.5nC, Kind of package: 7 inch reel; tape, Kind of channel: enhancement, Application: automotive industry.
Інші пропозиції DMT67M8LCGQ-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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DMT67M8LCGQ-7 | Виробник : Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V 60V V-DFN3333-8 T&R 2K |
товару немає в наявності |
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| DMT67M8LCGQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12.8A; Idm: 256A; 2.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12.8A Pulsed drain current: 256A Power dissipation: 2.2W Case: V-DFN3333-8 Gate-source voltage: ±20V On-state resistance: 8.1mΩ Mounting: SMD Gate charge: 37.5nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |