DMT68M8LSS-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CHANNEL 60V 28.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.9A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2107 pF @ 30 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 14.28 грн |
| 5000+ | 13.05 грн |
| 12500+ | 12.12 грн |
Відгуки про товар
Написати відгук
Технічний опис DMT68M8LSS-13 Diodes Incorporated
Description: MOSFET N-CHANNEL 60V 28.9A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28.9A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 31.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2107 pF @ 30 V.
Інші пропозиції DMT68M8LSS-13 за ціною від 12.56 грн до 44.93 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMT68M8LSS-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CHANNEL 60V 28.9A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28.9A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 31.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2107 pF @ 30 V |
на замовлення 16442 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
DMT68M8LSS-13 | Виробник : Diodes Incorporated |
MOSFET MOSFETBVDSS: 41V-60V |
на замовлення 7005 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
 |
DMT68M8LSS-13 | Виробник : Diodes Inc |
Trans MOSFET N-CH 60V 12.1A 8-Pin SO T/R |
товар відсутній |
|||||||||||||||||
 |
DMT68M8LSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.7A; Idm: 100A; 1.9W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Drain current: 9.7A Drain-source voltage: 60V Power dissipation: 1.9W Polarisation: unipolar Gate charge: 31.8nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 100A On-state resistance: 12mΩ кількість в упаковці: 2500 шт |
товар відсутній |
|||||||||||||||||
|
|
DMT68M8LSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.7A; Idm: 100A; 1.9W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Drain current: 9.7A Drain-source voltage: 60V Power dissipation: 1.9W Polarisation: unipolar Gate charge: 31.8nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 100A On-state resistance: 12mΩ |
товар відсутній |