DMT68M8LSS-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CHANNEL 60V 28.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.9A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2107 pF @ 30 V
| Кількість | Ціна |
|---|---|
| 2500+ | 15.16 грн |
| 5000+ | 12.71 грн |
| 7500+ | 12.44 грн |
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Технічний опис DMT68M8LSS-13 Diodes Incorporated
Description: MOSFET N-CHANNEL 60V 28.9A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28.9A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 31.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2107 pF @ 30 V.
Інші пропозиції DMT68M8LSS-13 за ціною від 11.78 грн до 42.71 грн
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DMT68M8LSS-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CHANNEL 60V 28.9A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28.9A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 31.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2107 pF @ 30 V |
на замовлення 9140 шт: термін постачання 21-31 дні (днів) |
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DMT68M8LSS-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFETBVDSS: 41V-60V |
на замовлення 2698 шт: термін постачання 21-30 дні (днів) |
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