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DMT69M5LCG-7

DMT69M5LCG-7 Diodes Incorporated

DMT69M5LCG.pdf
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 61V-100V V-DFN3333-8 T&R 2K
на замовлення 182 шт:
термін постачання 21-30 дні (днів)
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100+35.37 грн
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Технічний опис DMT69M5LCG-7 Diodes Incorporated

Description: MOSFET BVDSS: 61V~100V V-DFN3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.1A (Tc), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V, Power Dissipation (Max): 1.37W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: V-DFN3333-8 (Type B), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V.

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DMT69M5LCG-7 DMT69M5LCG-7 Diodes Incorporated DMT69M5LCG.pdf Description: MOSFET BVDSS: 61V~100V V-DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.37W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V
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DMT69M5LCG-7 DIODES INCORPORATED DMT69M5LCG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.7A
Power dissipation: 2.64W
Case: V-DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 208A
Kind of package: 7 inch reel; tape
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DMT69M5LCG-7 DMT69M5LCG.pdf
DMT69M5LCG-7
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V V-DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.37W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
DMT69M5LCG-7 DMT69M5LCG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.7A
Power dissipation: 2.64W
Case: V-DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 208A
Kind of package: 7 inch reel; tape
товару немає в наявності
В кошику  од. на суму  грн.