DMT69M5LCG-7 Diodes Incorporated
| Кількість | Ціна |
|---|---|
| 4+ | 100.15 грн |
| 10+ | 60.82 грн |
| 100+ | 34.82 грн |
| 500+ | 27.41 грн |
| 1000+ | 23.40 грн |
| 2000+ | 18.90 грн |
| 4000+ | 18.48 грн |
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Технічний опис DMT69M5LCG-7 Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V V-DFN3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.1A (Tc), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V, Power Dissipation (Max): 1.37W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: V-DFN3333-8 (Type B), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V.
Інші пропозиції DMT69M5LCG-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DMT69M5LCG-7 | Виробник : Diodes Incorporated |
 Description: MOSFET BVDSS: 61V~100V V-DFN3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.1A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V Power Dissipation (Max): 1.37W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: V-DFN3333-8 (Type B) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V |
товару немає в наявності |
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| DMT69M5LCG-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11.7A Power dissipation: 2.64W Case: V-DFN3333-8 Gate-source voltage: ±20V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 28.4nC Kind of channel: enhancement Pulsed drain current: 208A Kind of package: 7 inch reel; tape |
товару немає в наявності |