DMT8008LFG-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 80V 16A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta), 23.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2000+ | 42.54 грн |
| 4000+ | 38.20 грн |
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Технічний опис DMT8008LFG-7 Diodes Incorporated
Description: MOSFET N-CH 80V 16A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 48A (Tc), Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V, Power Dissipation (Max): 1W (Ta), 23.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V.
Інші пропозиції DMT8008LFG-7 за ціною від 37.81 грн до 147.22 грн
| Фото | Назва | Виробник | Інформація |
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DMT8008LFG-7 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 61V-100V |
на замовлення 6670 шт: термін постачання 21-30 дні (днів) |
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DMT8008LFG-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 80V 16A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Power Dissipation (Max): 1W (Ta), 23.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V |
на замовлення 10980 шт: термін постачання 21-31 дні (днів) |
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| DMT8008LFG-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 192A; 2.5W Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 80V Drain current: 13A On-state resistance: 10.4mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 37.7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 192A кількість в упаковці: 2000 шт |
товару немає в наявності |
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| DMT8008LFG-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 192A; 2.5W Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 80V Drain current: 13A On-state resistance: 10.4mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 37.7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 192A |
товару немає в наявності |