DMT8008LPS-13 DIODES INCORPORATED
Виробник: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 66A; Idm: 330A; 2.8W
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: 80V
Drain current: 66A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 41.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 330A
кількість в упаковці: 2500 шт
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Технічний опис DMT8008LPS-13 DIODES INCORPORATED
Description: MOSFET N-CH 80V 83A PWRDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 83A (Tc), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V, Power Dissipation (Max): 1.3W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: PowerDI5060-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V.
Інші пропозиції DMT8008LPS-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DMT8008LPS-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 80V 83A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V Power Dissipation (Max): 1.3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V |
товару немає в наявності |
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DMT8008LPS-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS 61V-100V |
товару немає в наявності |
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| DMT8008LPS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 66A; Idm: 330A; 2.8W Mounting: SMD Case: PowerDI5060-8 Drain-source voltage: 80V Drain current: 66A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 2.8W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 41.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 330A |
товару немає в наявності |