DMT8012LK3-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 44A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
| Кількість | Ціна |
|---|---|
| 2500+ | 27.75 грн |
| 5000+ | 24.44 грн |
| 7500+ | 23.98 грн |
Відгуки про товар
Написати відгук
Технічний опис DMT8012LK3-13 Diodes Incorporated
Description: MOSFET N-CH 80V 44A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V, Power Dissipation (Max): 2.7W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V.
Інші пропозиції DMT8012LK3-13 за ціною від 21.52 грн до 103.38 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMT8012LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 80V 44A TO252 Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.7W (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 210863 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
DMT8012LK3-13 | Diodes Incorporated |
MOSFETs N-Ch Enh Mode FET 80V 20Vgss 80A |
на замовлення 1946 шт: термін постачання 21-30 дні (днів) |
|
| DMT8012LK3-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 44A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.7W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 44A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.7W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 210863 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 72.00 грн |
| 10+ | 59.04 грн |
| 100+ | 41.22 грн |
| 500+ | 30.79 грн |
| 1000+ | 28.05 грн |
| DMT8012LK3-13 |
|
Виробник: Diodes Incorporated
MOSFETs N-Ch Enh Mode FET 80V 20Vgss 80A
MOSFETs N-Ch Enh Mode FET 80V 20Vgss 80A
на замовлення 1946 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 103.38 грн |
| 10+ | 64.38 грн |
| 100+ | 37.13 грн |
| 500+ | 29.11 грн |
| 1000+ | 26.51 грн |
| 2500+ | 23.00 грн |
| 5000+ | 21.52 грн |