DMT8012LSS-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 9.7A 8SO
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Qualification: AEC-Q101
Grade: Automotive
| Кількість | Ціна |
|---|---|
| 2500+ | 24.95 грн |
| 5000+ | 24.00 грн |
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Технічний опис DMT8012LSS-13 Diodes Incorporated
Description: MOSFET N-CH 80V 9.7A 8SO, Rds On (Max) @ Id, Vgs: 16.5mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.5W (Ta), Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції DMT8012LSS-13 за ціною від 22.72 грн до 94.35 грн
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DMT8012LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 80V 9.7A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 28247 шт: термін постачання 21-31 дні (днів) |
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DMT8012LSS-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 61V-100V |
на замовлення 2140 шт: термін постачання 21-30 дні (днів) |
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| DMT8012LSS-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 9.7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 80V 9.7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 28247 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 87.82 грн |
| 10+ | 54.32 грн |
| 100+ | 38.70 грн |
| 500+ | 28.58 грн |
| 1000+ | 26.02 грн |
| DMT8012LSS-13 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 61V-100V
MOSFETs MOSFET BVDSS: 61V-100V
на замовлення 2140 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 94.35 грн |
| 10+ | 59.36 грн |
| 100+ | 35.58 грн |
| 500+ | 28.27 грн |
| 1000+ | 26.16 грн |
| 2500+ | 22.72 грн |