DMTH10H010SPSQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
Power Dissipation (Max): 1.5W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 2500+ | 47.00 грн |
| 5000+ | 44.91 грн |
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Технічний опис DMTH10H010SPSQ-13 Diodes Incorporated
Description: DIODES INC. - DMTH10H010SPSQ-13 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 6600 µohm, PowerDI 5060, Oberflächenmontage, tariffCode: 85411000, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 100V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 100A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4V, euEccn: NLR, Verlustleistung: 166W, Bauform - Transistor: PowerDI 5060, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 6600µohm, SVHC: Lead (25-Jun-2025).
Інші пропозиції DMTH10H010SPSQ-13 за ціною від 47.19 грн до 165.35 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DMTH10H010SPSQ-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 61V-100V PowerDI5060-8 T&R 2.5K |
на замовлення 1630 шт: термін постачання 21-30 дні (днів) |
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DMTH10H010SPSQ-13 | DIODES INC. |
Description: DIODES INC. - DMTH10H010SPSQ-13 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 6600 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 166W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 6600µohm SVHC: Lead (25-Jun-2025) |
на замовлення 2275 шт: термін постачання 21-31 дні (днів) |
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DMTH10H010SPSQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V Power Dissipation (Max): 1.5W (Ta), 166W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 67972 шт: термін постачання 21-31 дні (днів) |
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| DMTH10H010SPSQ-13 |
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Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 61V-100V PowerDI5060-8 T&R 2.5K
MOSFETs MOSFET BVDSS: 61V-100V PowerDI5060-8 T&R 2.5K
на замовлення 1630 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 143.58 грн |
| 10+ | 97.86 грн |
| 100+ | 59.35 грн |
| 500+ | 51.48 грн |
| 1000+ | 47.96 грн |
| 2500+ | 47.19 грн |
| DMTH10H010SPSQ-13 |
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Виробник: DIODES INC.
Description: DIODES INC. - DMTH10H010SPSQ-13 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 6600 µohm, PowerDI 5060, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 166W
Bauform - Transistor: PowerDI 5060
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 6600µohm
SVHC: Lead (25-Jun-2025)
Description: DIODES INC. - DMTH10H010SPSQ-13 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 6600 µohm, PowerDI 5060, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 166W
Bauform - Transistor: PowerDI 5060
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 6600µohm
SVHC: Lead (25-Jun-2025)
на замовлення 2275 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 156.71 грн |
| 10+ | 105.02 грн |
| 100+ | 72.20 грн |
| 500+ | 52.49 грн |
| 1000+ | 47.61 грн |
| DMTH10H010SPSQ-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
Power Dissipation (Max): 1.5W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
Power Dissipation (Max): 1.5W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
Qualification: AEC-Q101
на замовлення 67972 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 165.35 грн |
| 10+ | 102.32 грн |
| 100+ | 69.86 грн |
| 500+ | 52.52 грн |
| 1000+ | 51.59 грн |