Технічний опис DMTH10H017LPD-13 Diodes Incorporated
Description: MOSFET 2N-CH 100V 59A POWERDI50, Supplier Device Package: PowerDI5060-8 (Type E), Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V, Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V, Current - Continuous Drain (Id) @ 25°C: 59A (Tc), Drain to Source Voltage (Vdss): 100V, Power - Max: 2.6W (Ta), 93W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMTH10H017LPD-13 за ціною від 38.51 грн до 103.06 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMTH10H017LPD-13 | Diodes Incorporated |
 Description: MOSFET 2N-CH 100V 59A POWERDI50Supplier Device Package: PowerDI5060-8 (Type E) Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Drain to Source Voltage (Vdss): 100V Power - Max: 2.6W (Ta), 93W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
на замовлення 212500 шт: термін постачання 21-31 дні (днів) |
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| DMTH10H017LPD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 100V 59A POWERDI50 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta), 93W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type E) |
на замовлення 214744 шт: термін постачання 21-31 дні (днів) |
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| DMTH10H017LPD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 100V 59A POWERDI50
Supplier Device Package: PowerDI5060-8 (Type E)
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2.6W (Ta), 93W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 100V 59A POWERDI50
Supplier Device Package: PowerDI5060-8 (Type E)
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2.6W (Ta), 93W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 212500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 42.80 грн |
| 5000+ | 39.25 грн |
| 12500+ | 38.51 грн |
| DMTH10H017LPD-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 100V 59A POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 93W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type E)
Description: MOSFET 2N-CH 100V 59A POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 93W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type E)
на замовлення 214744 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.06 грн |
| 10+ | 81.56 грн |
| 100+ | 63.41 грн |
| 500+ | 50.44 грн |
| 1000+ | 41.09 грн |