DMTH10H017LPDQ-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET 2N-CH 100V 13A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta), 93W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type E)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 47.08 грн |
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Технічний опис DMTH10H017LPDQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 100V 13A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W (Ta), 93W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V, Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type E), Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції DMTH10H017LPDQ-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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DMTH10H017LPDQ-13 | Виробник : Diodes Inc |
Trans MOSFET N-CH 100V 13A Automotive 8-Pin PowerDI EP T/R |
товар відсутній |
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| DMTH10H017LPDQ-13 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 9A; Idm: 236A; 1.5W Mounting: SMD Pulsed drain current: 236A Power dissipation: 1.5W Gate charge: 28.6nC Polarisation: unipolar Drain current: 9A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Kind of package: reel; tape Case: PowerDI®5060-8 On-state resistance: 30.3mΩ кількість в упаковці: 2500 шт |
товар відсутній |
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DMTH10H017LPDQ-13 | Виробник : Diodes Zetex |
Trans MOSFET N-CH 100V 13A Automotive 8-Pin PowerDI EP T/R |
товар відсутній |
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DMTH10H017LPDQ-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 61V-100V PowerDI5060-8 T&R 2.5K |
товар відсутній |
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| DMTH10H017LPDQ-13 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 9A; Idm: 236A; 1.5W Mounting: SMD Pulsed drain current: 236A Power dissipation: 1.5W Gate charge: 28.6nC Polarisation: unipolar Drain current: 9A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Kind of package: reel; tape Case: PowerDI®5060-8 On-state resistance: 30.3mΩ |
товар відсутній |