DMTH10H017LPDQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 100V 13A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta), 93W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type E)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 48.20 грн |
| 5000+ | 45.69 грн |
Відгуки про товар
Написати відгук
Технічний опис DMTH10H017LPDQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 100V 13A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W (Ta), 93W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V, Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type E), Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції DMTH10H017LPDQ-13 за ціною від 48.12 грн до 159.28 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMTH10H017LPDQ-13 | Diodes Zetex |
Trans MOSFET N-CH 100V 13A Automotive AEC-Q101 8-Pin PowerDI EP T/R |
на замовлення 1030000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
DMTH10H017LPDQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 100V 13A PWRDI50Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta), 93W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type E) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 86435 шт: термін постачання 21-31 дні (днів) |
|
| DMTH10H017LPDQ-13 |
![]() |
Виробник: Diodes Zetex
Trans MOSFET N-CH 100V 13A Automotive AEC-Q101 8-Pin PowerDI EP T/R
Trans MOSFET N-CH 100V 13A Automotive AEC-Q101 8-Pin PowerDI EP T/R
на замовлення 1030000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 60.55 грн |
| DMTH10H017LPDQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 100V 13A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta), 93W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type E)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 13A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta), 93W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type E)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 86435 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 159.28 грн |
| 10+ | 100.66 грн |
| 100+ | 68.93 грн |
| 500+ | 52.34 грн |
| 1000+ | 48.12 грн |



