DMTH10H1M7STLWQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI10
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: POWERDI1012-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
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Технічний опис DMTH10H1M7STLWQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI10, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: POWERDI1012-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 6W (Ta), 250W (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 250A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 9871 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V.
Інші пропозиції DMTH10H1M7STLWQ-13 за ціною від 159.88 грн до 396.64 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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DMTH10H1M7STLWQ-13 | Diodes Zetex |
Diodes Incorporated offers a portfolio of automotive MOSFETs packaged in the space saving, thermally efficient TOLL (PD1012S) package. |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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DMTH10H1M7STLWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI10 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 9871 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: POWERDI1012-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 6W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 250A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
на замовлення 85113 шт: термін постачання 21-31 дні (днів) |
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DMTH10H1M7STLWQ-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 61V-100V PowerDI1012-8 T&R 1.5K |
на замовлення 1380 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMTH10H1M7STLWQ-13 |
|
Виробник: Diodes Zetex
Diodes Incorporated offers a portfolio of automotive MOSFETs packaged in the space saving, thermally efficient TOLL (PD1012S) package.
Diodes Incorporated offers a portfolio of automotive MOSFETs packaged in the space saving, thermally efficient TOLL (PD1012S) package.
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 227.73 грн |
| DMTH10H1M7STLWQ-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI10
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: POWERDI1012-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: MOSFET BVDSS: 61V~100V POWERDI10
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: POWERDI1012-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
на замовлення 85113 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 396.64 грн |
| 10+ | 271.09 грн |
| 100+ | 200.34 грн |
| 500+ | 159.88 грн |
| DMTH10H1M7STLWQ-13 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 61V-100V PowerDI1012-8 T&R 1.5K
MOSFETs MOSFET BVDSS: 61V-100V PowerDI1012-8 T&R 1.5K
на замовлення 1380 шт:
термін постачання 21-30 дні (днів)