Технічний опис DMTH10H4M5LPS-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 14A, Power dissipation: 2.7W, Case: PowerDI5060-8, Gate-source voltage: ±20V, On-state resistance: 6.2mΩ, Mounting: SMD, Gate charge: 80nC, Kind of channel: enhancement, Pulsed drain current: 400A, Kind of package: 13 inch reel; tape.
Інші пропозиції DMTH10H4M5LPS-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMTH10H4M5LPS-13 | Виробник : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 14A Power dissipation: 2.7W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 80nC Kind of channel: enhancement Pulsed drain current: 400A Kind of package: 13 inch reel; tape |
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