Технічний опис DMTH3004LFGQ-7 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 250A; 2.5W, Mounting: SMD, Pulsed drain current: 250A, Power dissipation: 2.5W, Gate charge: 44nC, Polarisation: unipolar, Drain current: 10A, Kind of channel: enhancement, Drain-source voltage: 30V, Application: automotive industry, Type of transistor: N-MOSFET, Gate-source voltage: ±16V, Kind of package: 7 inch reel; tape, Case: PowerDI3333-8, On-state resistance: 8.5mΩ.
Інші пропозиції DMTH3004LFGQ-7
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| DMTH3004LFGQ-7 | Diodes Incorporated |
 MOSFET MOSFET BVDSS: 25V-30V |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMTH3004LFGQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 250A; 2.5W Mounting: SMD Pulsed drain current: 250A Power dissipation: 2.5W Gate charge: 44nC Polarisation: unipolar Drain current: 10A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±16V Kind of package: 7 inch reel; tape Case: PowerDI3333-8 On-state resistance: 8.5mΩ |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
| DMTH3004LFGQ-7 |
|
Виробник: Diodes Incorporated
MOSFET MOSFET BVDSS: 25V-30V
MOSFET MOSFET BVDSS: 25V-30V
товару немає в наявності
В кошику
од. на суму грн.
| DMTH3004LFGQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 250A; 2.5W
Mounting: SMD
Pulsed drain current: 250A
Power dissipation: 2.5W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 8.5mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 250A; 2.5W
Mounting: SMD
Pulsed drain current: 250A
Power dissipation: 2.5W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
On-state resistance: 8.5mΩ
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.