DMTH4004SK3-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO252
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
| Кількість | Ціна |
|---|---|
| 2500+ | 50.21 грн |
| 5000+ | 46.53 грн |
Відгуки про товар
Написати відгук
Технічний опис DMTH4004SK3-13 Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO252, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.9W (Ta), 180W (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V.
Інші пропозиції DMTH4004SK3-13 за ціною від 114.72 грн до 114.72 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||
|---|---|---|---|---|---|---|---|
|
|
DMTH4004SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 100A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 90A, 10V Power Dissipation (Max): 3.9W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
|
| DMTH4004SK3-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
Description: MOSFET N-CH 40V 100A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 114.72 грн |