DMTH4004SPSQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 31A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2500+ | 43.82 грн |
| 5000+ | 40.09 грн |
| 12500+ | 38.58 грн |
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Технічний опис DMTH4004SPSQ-13 Diodes Incorporated
Description: MOSFET N-CH 40V 31A PWRDI5060, Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PowerDI5060-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.6W (Ta), 167W (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMTH4004SPSQ-13 за ціною від 31.37 грн до 136.20 грн
| Фото | Назва | Виробник | Інформація |
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DMTH4004SPSQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 31A PWRDI5060 Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.6W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 442494 шт: термін постачання 21-31 дні (днів) |
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DMTH4004SPSQ-13 | Diodes Incorporated |
MOSFETs 40V N-Ch Enh FET Low Rdson |
на замовлення 2363 шт: термін постачання 21-30 дні (днів) |
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| DMTH4004SPSQ-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 31A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 31A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 442494 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 98.10 грн |
| DMTH4004SPSQ-13 |
|
Виробник: Diodes Incorporated
MOSFETs 40V N-Ch Enh FET Low Rdson
MOSFETs 40V N-Ch Enh FET Low Rdson
на замовлення 2363 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 136.20 грн |
| 10+ | 85.73 грн |
| 100+ | 49.72 грн |
| 500+ | 39.31 грн |
| 1000+ | 36.01 грн |
| 2500+ | 32.28 грн |
| 5000+ | 31.37 грн |