DMTH4007SK3-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 17.6A/76A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2082 pF @ 25 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 2500+ | 28.35 грн |
| 5000+ | 26.95 грн |
Відгуки про товар
Написати відгук
Технічний опис DMTH4007SK3-13 Diodes Incorporated
Description: MOSFET N-CH 40V 17.6A/76A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 76A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 41.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2082 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції DMTH4007SK3-13 за ціною від 28.28 грн до 132.92 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMTH4007SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 17.6A/76A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2082 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 7450 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
DMTH4007SK3-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40V |
на замовлення 453 шт: термін постачання 21-30 дні (днів) |
|
| DMTH4007SK3-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 17.6A/76A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2082 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 17.6A/76A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2082 pF @ 25 V
Qualification: AEC-Q101
на замовлення 7450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 89.40 грн |
| 10+ | 58.28 грн |
| 100+ | 40.64 грн |
| 500+ | 30.71 грн |
| 1000+ | 28.28 грн |
| DMTH4007SK3-13 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 31V-40V
MOSFETs MOSFET BVDSS: 31V-40V
на замовлення 453 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 132.92 грн |
| 10+ | 83.30 грн |
| 100+ | 48.38 грн |
| 500+ | 38.19 грн |
| 1000+ | 34.88 грн |
| 2500+ | 31.29 грн |
| 5000+ | 30.31 грн |