| Кількість | Ціна |
|---|---|
| 8+ | 42.34 грн |
| 10+ | 35.75 грн |
| 100+ | 21.38 грн |
| 500+ | 17.86 грн |
| 1000+ | 16.17 грн |
| 2500+ | 12.94 грн |
| 5000+ | 12.73 грн |
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Технічний опис DMTH4008LPS-13 Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI5060, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Active, Supplier Device Package: PowerDI5060-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMTH4008LPS-13 за ціною від 18.71 грн до 73.58 грн
| Фото | Назва | Виробник | Інформація |
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DMTH4008LPS-13 | Diodes Incorporated |
 Description: MOSFET N-CH 40V PWRDI5060Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active |
на замовлення 1872 шт: термін постачання 21-31 дні (днів) |
|
| DMTH4008LPS-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI5060
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Description: MOSFET N-CH 40V PWRDI5060
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
на замовлення 1872 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 73.58 грн |
| 10+ | 43.88 грн |
| 100+ | 28.61 грн |
| 500+ | 20.70 грн |
| 1000+ | 18.71 грн |