на замовлення 4850 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 47.92 грн |
| 10+ | 40.33 грн |
| 100+ | 24.09 грн |
| 500+ | 19.04 грн |
| 1000+ | 17.42 грн |
| 2500+ | 14.64 грн |
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Технічний опис DMTH4008LPS-13 Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V, Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMTH4008LPS-13 за ціною від 18.98 грн до 74.45 грн
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DMTH4008LPS-13 | Виробник : Diodes Incorporated |
 Description: MOSFET N-CH 40V PWRDI5060Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2350 шт: термін постачання 21-31 дні (днів) |
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| DMTH4008LPS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Drain-source voltage: 40V Drain current: 10.2A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 2.99W Polarisation: unipolar Gate charge: 15.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 110A Mounting: SMD кількість в упаковці: 2500 шт |
товару немає в наявності |
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DMTH4008LPS-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 40V PWRDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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| DMTH4008LPS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Drain-source voltage: 40V Drain current: 10.2A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 2.99W Polarisation: unipolar Gate charge: 15.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 110A Mounting: SMD |
товару немає в наявності |