DMTH4014LDVW-13 Diodes Incorporated

Description: MOSFET 2N-CH 40V 10.2A PWRDI3333, Supplier Device Package: PowerDI3333-8 (Type UXD), Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V, Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 27.5A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 1.16W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).