DMTH4014LFVWQ-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 885 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 61.23 грн |
| 10+ | 37.11 грн |
| 100+ | 24.47 грн |
| 500+ | 18.26 грн |
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Технічний опис DMTH4014LFVWQ-7 Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc), Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V, Power Dissipation (Max): 3.1W, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMTH4014LFVWQ-7 за ціною від 12.92 грн до 49.61 грн
| Фото | Назва | Виробник | Інформація |
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| DMTH4014LFVWQ-7 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40V PowerDI3333-8/SWP T&R 2K |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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DMTH4014LFVWQ-7 | Виробник : Diodes Zetex |
40V 175 Degrees N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 |
товару немає в наявності |
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| DMTH4014LFVWQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.1A; Idm: 180A; 3.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 8.1A Pulsed drain current: 180A Power dissipation: 3.1W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 11.2nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry кількість в упаковці: 1 шт |
товару немає в наявності |
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DMTH4014LFVWQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc) Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V Power Dissipation (Max): 3.1W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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| DMTH4014LFVWQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.1A; Idm: 180A; 3.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 8.1A Pulsed drain current: 180A Power dissipation: 3.1W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 11.2nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |