DMTH4014LPD-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 10.6A PWRDI50
Part Status: Active
Supplier Device Package: PowerDI5060-8
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.41W (Ta), 42.8W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2500+ | 23.16 грн |
| 5000+ | 20.15 грн |
| 7500+ | 19.77 грн |
| 12500+ | 18.35 грн |
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Технічний опис DMTH4014LPD-13 Diodes Incorporated
Description: MOSFET 2N-CH 40V 10.6A PWRDI50, Part Status: Active, Supplier Device Package: PowerDI5060-8, Qualification: AEC-Q101, Grade: Automotive, Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V, Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 2.41W (Ta), 42.8W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMTH4014LPD-13 за ціною від 21.79 грн до 90.34 грн
| Фото | Назва | Виробник | Інформація |
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DMTH4014LPD-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40V |
на замовлення 1150 шт: термін постачання 21-30 дні (днів) |
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DMTH4014LPD-13 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 40V 10.6A PWRDI50Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 2.41W (Ta), 42.8W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: PowerDI5060-8 Qualification: AEC-Q101 Grade: Automotive |
на замовлення 107508 шт: термін постачання 21-31 дні (днів) |
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