DMTH4014LPDQ-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET 2N-CH 40V 10.6A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.41W (Ta), 42.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
на замовлення 422500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 25.36 грн |
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Технічний опис DMTH4014LPDQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 40V 10.6A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.41W (Ta), 42.8W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V, Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMTH4014LPDQ-13 за ціною від 26.01 грн до 78.06 грн
| Фото | Назва | Виробник | Інформація |
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DMTH4014LPDQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 40V 10.6A PWRDI50 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.41W (Ta), 42.8W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 422500 шт: термін постачання 21-31 дні (днів) |
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DMTH4014LPDQ-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40V |
на замовлення 2438 шт: термін постачання 21-30 дні (днів) |
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DMTH4014LPDQ-13 | Виробник : Diodes Zetex |
Trans MOSFET N-CH 40V 10.6A Automotive AEC-Q101 8-Pin PowerDI EP T/R |
товару немає в наявності |
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| DMTH4014LPDQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 7.5A; Idm: 174A; 2.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.5A Pulsed drain current: 174A Power dissipation: 2.4W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 10.2nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry кількість в упаковці: 2500 шт |
товару немає в наявності |
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| DMTH4014LPDQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 7.5A; Idm: 174A; 2.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.5A Pulsed drain current: 174A Power dissipation: 2.4W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 10.2nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |