DMTH4014LPSWQ-13 Diodes Incorporated

Description: MOSFET BVDSS: 31V~40V POWERDI506, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: PowerDI5060-8 (Type UX), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 4W (Ta), 46.9W (Tc), Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).