DMTH41M2SPSQ-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.4W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11085 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2212 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 204.33 грн |
| 10+ | 165.42 грн |
| 100+ | 133.86 грн |
| 500+ | 111.66 грн |
| 1000+ | 95.61 грн |
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Технічний опис DMTH41M2SPSQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 225A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V, Power Dissipation (Max): 3.4W (Ta), 158W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type K), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11085 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMTH41M2SPSQ-13 за ціною від 90.05 грн до 226.35 грн
| Фото | Назва | Виробник | Інформація |
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DMTH41M2SPSQ-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40V PowerDI5060-8 T&R 2.5K |
на замовлення 2276 шт: термін постачання 21-30 дні (днів) |
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DMTH41M2SPSQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V Power Dissipation (Max): 3.4W (Ta), 158W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11085 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |