DMTH43M8LK3Q-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CHANNEL 40V 100A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 88W (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2500+ | 32.45 грн |
| 5000+ | 29.03 грн |
| 7500+ | 27.90 грн |
| 12500+ | 24.99 грн |
| 17500+ | 24.43 грн |
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Технічний опис DMTH43M8LK3Q-13 Diodes Incorporated
Description: MOSFET N-CHANNEL 40V 100A TO252, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Active, Supplier Device Package: TO-252-3, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 88W (Ta), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції DMTH43M8LK3Q-13 за ціною від 22.08 грн до 118.67 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
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DMTH43M8LK3Q-13 | Diodes Incorporated |
MOSFETs MOSFETBVDSS: 31V-40V |
на замовлення 12921 шт: термін постачання 21-30 дні (днів) |
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DMTH43M8LK3Q-13 | Diodes Incorporated |
Description: MOSFET N-CHANNEL 40V 100A TO252 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 88W (Ta) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 164380 шт: термін постачання 21-31 дні (днів) |
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| DMTH43M8LK3Q-13 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFETBVDSS: 31V-40V
MOSFETs MOSFETBVDSS: 31V-40V
на замовлення 12921 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 65.64 грн |
| 10+ | 52.24 грн |
| 100+ | 33.12 грн |
| 500+ | 29.19 грн |
| 1000+ | 26.44 грн |
| 2500+ | 23.14 грн |
| 5000+ | 22.08 грн |
| DMTH43M8LK3Q-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CHANNEL 40V 100A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 88W (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CHANNEL 40V 100A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 88W (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 164380 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 118.67 грн |
| 10+ | 72.53 грн |
| 100+ | 48.48 грн |
| 500+ | 35.81 грн |
| 1000+ | 32.70 грн |