DMTH43M8LPSQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 22A PWRDI5060
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 2.7W (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
| Кількість | Ціна |
|---|---|
| 2500+ | 22.57 грн |
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Технічний опис DMTH43M8LPSQ-13 Diodes Incorporated
Description: MOSFET N-CH 40V 22A PWRDI5060, Qualification: AEC-Q101, Grade: Automotive, Power Dissipation (Max): 2.7W (Ta), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Active, Supplier Device Package: PowerDI5060-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA.
Інші пропозиції DMTH43M8LPSQ-13 за ціною від 22.93 грн до 108.35 грн
| Фото | Назва | Виробник | Інформація |
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DMTH43M8LPSQ-13 | Виробник : DIODES INC. |
Description: DIODES INC. - DMTH43M8LPSQ-13 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 2700 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 83W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 2700µohm SVHC: Lead (27-Jun-2024) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMTH43M8LPSQ-13 | Виробник : DIODES INC. |
Description: DIODES INC. - DMTH43M8LPSQ-13 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 2700 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 83W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 2700µohm SVHC: Lead (27-Jun-2024) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMTH43M8LPSQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 40V 22A PWRDI5060 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.7W (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMTH43M8LPSQ-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40V |
на замовлення 4308 шт: термін постачання 21-30 дні (днів) |
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