DMTH45M5LPDWQ-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET 2N-CH 40V 79A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 60W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 38.13 грн |
| 5000+ | 34.84 грн |
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Технічний опис DMTH45M5LPDWQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 40V 79A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), 60W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 79A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V, Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UXD), Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMTH45M5LPDWQ-13 за ціною від 40.02 грн до 140.27 грн
| Фото | Назва | Виробник | Інформація |
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DMTH45M5LPDWQ-13 | Виробник : Diodes Zetex |
Trans MOSFET N-CH 40V 79A 8-Pin PowerDI EP T/R Automotive AEC-Q101 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMTH45M5LPDWQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 40V 79A PWRDI50 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 60W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UXD) Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7519 шт: термін постачання 21-31 дні (днів) |
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| DMTH45M5LPDWQ-13 | Виробник : Diodes Inc |
N Channel MOSFET Transistor |
товару немає в наявності |
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| DMTH45M5LPDWQ-13 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3W Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET x2 Polarisation: unipolar Gate charge: 13.9nC On-state resistance: 7.9mΩ Power dissipation: 3W Drain current: 55A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 316A Kind of package: 13 inch reel; tape Application: automotive industry Case: PowerDI5060-8 |
товару немає в наявності |