DMTH45M5LPSWQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 72W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис DMTH45M5LPSWQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerDI5060-8 (Type UX), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 3.5W (Ta), 72W (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 86A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMTH45M5LPSWQ-13 за ціною від 24.52 грн до 92.21 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMTH45M5LPSWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI5060-8 (Type UX) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 3.5W (Ta), 72W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 4360 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
DMTH45M5LPSWQ-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40V PowerDI5060-8/SWP T&R 2.5K |
на замовлення 3447 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMTH45M5LPSWQ-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 72W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET BVDSS: 31V~40V POWERDI506
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 72W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 4360 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 92.21 грн |
| 10+ | 55.89 грн |
| 100+ | 36.89 грн |
| 500+ | 26.98 грн |
| 1000+ | 24.52 грн |
| DMTH45M5LPSWQ-13 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 31V-40V PowerDI5060-8/SWP T&R 2.5K
MOSFETs MOSFET BVDSS: 31V-40V PowerDI5060-8/SWP T&R 2.5K
на замовлення 3447 шт:
термін постачання 21-30 дні (днів)