DMTH45M5SPDW-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 79A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W (Ta), 60W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1083pF @ 20V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
| Кількість | Ціна |
|---|---|
| 3+ | 132.12 грн |
| 10+ | 81.06 грн |
| 100+ | 54.49 грн |
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Технічний опис DMTH45M5SPDW-13 Diodes Incorporated
Description: MOSFET 2N-CH 40V 79A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.3W (Ta), 60W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 79A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1083pF @ 20V, Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UXD).
Інші пропозиції DMTH45M5SPDW-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
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DMTH45M5SPDW-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 79A PWRDI50 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.3W (Ta), 60W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1083pF @ 20V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UXD) |
товару немає в наявності |
В кошику од. на суму грн. |
| DMTH45M5SPDW-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 79A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W (Ta), 60W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1083pF @ 20V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Description: MOSFET 2N-CH 40V 79A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W (Ta), 60W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1083pF @ 20V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
товару немає в наявності
В кошику
од. на суму грн.