DMTH46M7SFVW-13 Diodes Incorporated


DMTH46M7SFVW.pdf
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
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Технічний опис DMTH46M7SFVW-13 Diodes Incorporated

Description: MOSFET BVDSS: 31V~40V POWERDI333, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc).

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DMTH46M7SFVW-13 DMTH46M7SFVW-13 Diodes Incorporated DMTH46M7SFVW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
DMTH46M7SFVW-13 DMTH46M7SFVW.pdf
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.