DMTH47M2LPSW-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 20 V
на замовлення 122500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 16.80 грн |
| 5000+ | 14.88 грн |
| 7500+ | 14.22 грн |
| 12500+ | 12.64 грн |
| 17500+ | 12.48 грн |
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Технічний опис DMTH47M2LPSW-13 Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 73A (Tc), Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V, Power Dissipation (Max): 3.8W (Ta), 68W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 20 V.
Інші пропозиції DMTH47M2LPSW-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMTH47M2LPSW-13 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 51A; Idm: 292A; 3.8W Mounting: SMD Type of transistor: N-MOSFET x2 Kind of package: 13 inch reel; tape Gate-source voltage: ±20V Kind of channel: enhancement Drain-source voltage: 40V Pulsed drain current: 292A Drain current: 51A Gate charge: 12.6nC On-state resistance: 12mΩ Polarisation: unipolar Case: PowerDI5060-8 Power dissipation: 3.8W кількість в упаковці: 2500 шт |
товару немає в наявності |
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| DMTH47M2LPSW-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V~40V PowerDI5060-8/SWP T&R 2.5K |
товару немає в наявності |
||
| DMTH47M2LPSW-13 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 51A; Idm: 292A; 3.8W Mounting: SMD Type of transistor: N-MOSFET x2 Kind of package: 13 inch reel; tape Gate-source voltage: ±20V Kind of channel: enhancement Drain-source voltage: 40V Pulsed drain current: 292A Drain current: 51A Gate charge: 12.6nC On-state resistance: 12mΩ Polarisation: unipolar Case: PowerDI5060-8 Power dissipation: 3.8W |
товару немає в наявності |