DMTH47M2SK3-13 Diodes Incorporated
| Кількість | Ціна |
|---|---|
| 5+ | 74.09 грн |
| 10+ | 45.53 грн |
| 100+ | 25.81 грн |
| 500+ | 19.90 грн |
| 1000+ | 17.93 грн |
| 2500+ | 16.10 грн |
| 5000+ | 15.19 грн |
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Технічний опис DMTH47M2SK3-13 Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V TO252 T&R, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V, Power Dissipation (Max): 3.5W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V.
Інші пропозиції DMTH47M2SK3-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
DMTH47M2SK3-13 | Diodes Incorporated |
 Description: MOSFET BVDSS: 31V~40V TO252 T&RPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 3.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| DMTH47M2SK3-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V TO252 T&R
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Description: MOSFET BVDSS: 31V~40V TO252 T&R
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.