DMTH4M70SPGWQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI808
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
Power Dissipation (Max): 5.6W (Ta), 428W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI8080-5
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10053 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 2000+ | 93.65 грн |
| 4000+ | 86.48 грн |
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Технічний опис DMTH4M70SPGWQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI808, Packaging: Tape & Reel (TR), Package / Case: SOT-1235, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 460A (Tc), Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V, Power Dissipation (Max): 5.6W (Ta), 428W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI8080-5, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 117.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10053 pF @ 20 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20, Qualification: AEC-Q101.
Інші пропозиції DMTH4M70SPGWQ-13 за ціною від 92.13 грн до 285.61 грн
| Фото | Назва | Виробник | Інформація |
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DMTH4M70SPGWQ-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V~40V PowerDI8080-5 T&R 2K |
на замовлення 1116 шт: термін постачання 21-30 дні (днів) |
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DMTH4M70SPGWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI808 Packaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 460A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V Power Dissipation (Max): 5.6W (Ta), 428W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI8080-5 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 117.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10053 pF @ 20 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20 Qualification: AEC-Q101 |
на замовлення 4345 шт: термін постачання 21-31 дні (днів) |
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| DMTH4M70SPGWQ-13 |
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Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 31V~40V PowerDI8080-5 T&R 2K
MOSFETs MOSFET BVDSS: 31V~40V PowerDI8080-5 T&R 2K
на замовлення 1116 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 278.14 грн |
| 10+ | 180.35 грн |
| 100+ | 110.41 грн |
| 500+ | 98.46 грн |
| 1000+ | 95.64 грн |
| 2000+ | 92.13 грн |
| DMTH4M70SPGWQ-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI808
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
Power Dissipation (Max): 5.6W (Ta), 428W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI8080-5
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10053 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
Qualification: AEC-Q101
Description: MOSFET BVDSS: 31V~40V POWERDI808
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
Power Dissipation (Max): 5.6W (Ta), 428W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI8080-5
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10053 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
Qualification: AEC-Q101
на замовлення 4345 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 285.61 грн |
| 10+ | 180.41 грн |
| 100+ | 126.67 грн |
| 500+ | 99.34 грн |