| Кількість | Ціна |
|---|---|
| 2+ | 169.02 грн |
| 10+ | 112.42 грн |
| 100+ | 71.03 грн |
| 500+ | 56.61 грн |
| 1000+ | 53.24 грн |
| 2500+ | 47.61 грн |
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Технічний опис DMTH6004LPSQ-13 Diodes Incorporated
Description: MOSFET N-CH 60V 100A PWRDI5060-8, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 47.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: PowerDI5060-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.6W (Ta), 138W (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMTH6004LPSQ-13 за ціною від 54.62 грн до 185.92 грн
| Фото | Назва | Виробник | Інформація |
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Ціна |
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DMTH6004LPSQ-13 | Diodes Incorporated |
 Description: MOSFET N-CH 60V 100A PWRDI5060-8Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 47.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.6W (Ta), 138W (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 1895 шт: термін постачання 21-31 дні (днів) |
|
| DMTH6004LPSQ-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 100A PWRDI5060-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 47.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.6W (Ta), 138W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 100A PWRDI5060-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 47.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.6W (Ta), 138W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 1895 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 185.92 грн |
| 10+ | 115.12 грн |
| 100+ | 78.74 грн |
| 500+ | 59.31 грн |
| 1000+ | 54.62 грн |