DMTH6004SCTB-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 60V 100A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Qualification: AEC-Q101
на замовлення 22400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 86.06 грн |
| 1600+ | 70.32 грн |
| 2400+ | 66.8 грн |
| 5600+ | 60.33 грн |
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Технічний опис DMTH6004SCTB-13 Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V, Power Dissipation (Max): 4.7W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції DMTH6004SCTB-13 за ціною від 62.49 грн до 167.46 грн
| Фото | Назва | Виробник | Інформація |
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DMTH6004SCTB-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 60V 100A TO263AB Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 4.7W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 23190 шт: термін постачання 21-31 дні (днів) |
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DMTH6004SCTB-13 | Виробник : Diodes Incorporated |
MOSFET Enh Mode FET 41V to 60V TO263 |
на замовлення 1476 шт: термін постачання 21-30 дні (днів) |
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| DMTH6004SCTB-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 200A; 4.7W; TO263AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 200A Power dissipation: 4.7W Case: TO263AB Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 95.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 800 шт |
товар відсутній |
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| DMTH6004SCTB-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 200A; 4.7W; TO263AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 200A Power dissipation: 4.7W Case: TO263AB Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 95.4nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |