DMTH6004SCTB-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO263AB
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 800+ | 95.60 грн |
| 1600+ | 78.11 грн |
| 2400+ | 74.20 грн |
| 5600+ | 67.02 грн |
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Технічний опис DMTH6004SCTB-13 Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO263AB, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: TO-263, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 4.7W (Ta), 136W (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції DMTH6004SCTB-13 за ціною від 67.30 грн до 219.06 грн
| Фото | Назва | Виробник | Інформація |
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DMTH6004SCTB-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 100A TO263AB Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: TO-263 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 4.7W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 23190 шт: термін постачання 21-31 дні (днів) |
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DMTH6004SCTB-13 | Diodes Incorporated |
MOSFETs Enh Mode FET 41V to 60V TO263 |
на замовлення 829 шт: термін постачання 21-30 дні (днів) |
|
| DMTH6004SCTB-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO263AB
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 100A TO263AB
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 23190 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 170.89 грн |
| 10+ | 136.68 грн |
| 100+ | 108.79 грн |
| DMTH6004SCTB-13 |
|
Виробник: Diodes Incorporated
MOSFETs Enh Mode FET 41V to 60V TO263
MOSFETs Enh Mode FET 41V to 60V TO263
на замовлення 829 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 219.06 грн |
| 10+ | 145.57 грн |
| 100+ | 88.61 грн |
| 800+ | 67.30 грн |