DMTH6006LPSW-13 Diodes Incorporated

Description: MOSFET N-CH 60V 17.2A/100A PWRDI, Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2162 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 34.9 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerDI5060-8 (Type Q), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2.88W (Ta), 100W (Tc).