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DMTH6006SPS-13

DMTH6006SPS-13 Diodes Incorporated

DMTH6006SPS.pdf
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V PWRDI5060
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Технічний опис DMTH6006SPS-13 Diodes Incorporated

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 12.6A; Idm: 400A; 2.94W, Kind of channel: enhancement, Mounting: SMD, Case: PowerDI5060-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Pulsed drain current: 400A, Drain current: 12.6A, Drain-source voltage: 60V, Gate charge: 27.9nC, On-state resistance: 6.2mΩ, Power dissipation: 2.94W, Gate-source voltage: ±20V, Kind of package: 13 inch reel; tape.

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DMTH6006SPS-13 DIODES INCORPORATED DMTH6006SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12.6A; Idm: 400A; 2.94W
Kind of channel: enhancement
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 400A
Drain current: 12.6A
Drain-source voltage: 60V
Gate charge: 27.9nC
On-state resistance: 6.2mΩ
Power dissipation: 2.94W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
DMTH6006SPS-13 DMTH6006SPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12.6A; Idm: 400A; 2.94W
Kind of channel: enhancement
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 400A
Drain current: 12.6A
Drain-source voltage: 60V
Gate charge: 27.9nC
On-state resistance: 6.2mΩ
Power dissipation: 2.94W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
товару немає в наявності
В кошику  од. на суму  грн.