DMTH6009LK3Q-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 14.2A/59A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 60W (Tc)
| Кількість | Ціна |
|---|---|
| 2500+ | 36.10 грн |
| 5000+ | 33.49 грн |
Відгуки про товар
Написати відгук
Технічний опис DMTH6009LK3Q-13 Diodes Incorporated
Description: MOSFET N-CH 60V 14.2A/59A TO252, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252-3, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 60W (Tc).
Інші пропозиції DMTH6009LK3Q-13 за ціною від 32.98 грн до 140.30 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMTH6009LK3Q-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 14.2A/59A TO252Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.2W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 63979 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
DMTH6009LK3Q-13 | Diodes Incorporated |
MOSFETs N-Ch Enh Mode Fet 60Vdss 20Vgss 60W |
на замовлення 10861 шт: термін постачання 21-30 дні (днів) |
|
| DMTH6009LK3Q-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 14.2A/59A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 14.2A/59A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 63979 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 90.98 грн |
| 10+ | 70.24 грн |
| 100+ | 49.32 грн |
| 500+ | 39.11 грн |
| 1000+ | 35.83 грн |
| DMTH6009LK3Q-13 |
![]() |
Виробник: Diodes Incorporated
MOSFETs N-Ch Enh Mode Fet 60Vdss 20Vgss 60W
MOSFETs N-Ch Enh Mode Fet 60Vdss 20Vgss 60W
на замовлення 10861 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 140.30 грн |
| 10+ | 86.54 грн |
| 100+ | 51.62 грн |
| 500+ | 40.86 грн |
| 1000+ | 37.41 грн |
| 2500+ | 33.55 грн |
| 5000+ | 32.98 грн |



