DMTH6010SK3-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 30 V
| Кількість | Ціна |
|---|---|
| 2500+ | 30.43 грн |
| 5000+ | 27.24 грн |
| 7500+ | 27.14 грн |
Відгуки про товар
Написати відгук
Технічний опис DMTH6010SK3-13 Diodes Incorporated
Description: MOSFET N-CH 60V 16.3A/70A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 30 V.
Інші пропозиції DMTH6010SK3-13 за ціною від 26.44 грн до 113.93 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMTH6010SK3-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60 |
на замовлення 3154 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
DMTH6010SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 16.3A/70A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 30 V |
на замовлення 11951 шт: термін постачання 21-31 дні (днів) |
|
| DMTH6010SK3-13 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60
MOSFETs MOSFET BVDSS: 41V-60
на замовлення 3154 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 100.10 грн |
| 10+ | 67.61 грн |
| 100+ | 43.67 грн |
| 500+ | 34.46 грн |
| 1000+ | 31.44 грн |
| 2500+ | 27.43 грн |
| 5000+ | 26.44 грн |
| DMTH6010SK3-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 30 V
Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 30 V
на замовлення 11951 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 113.93 грн |
| 10+ | 69.71 грн |
| 100+ | 46.71 грн |
| 500+ | 34.56 грн |
| 1000+ | 31.58 грн |