DMTH6010SK3Q-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2841 pF @ 30 V
Qualification: AEC-Q101
на замовлення 2285 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 88.33 грн |
| 10+ | 68.82 грн |
| 100+ | 48.29 грн |
| 500+ | 38.21 грн |
| 1000+ | 34.96 грн |
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Технічний опис DMTH6010SK3Q-13 Diodes Incorporated
Description: MOSFET N-CH 60V 16.3A/70A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 38.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2841 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції DMTH6010SK3Q-13 за ціною від 32.15 грн до 93.55 грн
| Фото | Назва | Виробник | Інформація |
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DMTH6010SK3Q-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
на замовлення 1856 шт: термін постачання 21-30 дні (днів) |
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| DMTH6010SK3Q-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13.6A; Idm: 280A; 3.1W; TO252 Mounting: SMD Kind of package: 13 inch reel; tape Polarisation: unipolar On-state resistance: 8mΩ Drain current: 13.6A Drain-source voltage: 60V Case: TO252 Gate charge: 38.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 280A Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 3.1W кількість в упаковці: 2500 шт |
товару немає в наявності |
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DMTH6010SK3Q-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 60V 16.3A/70A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 38.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2841 pF @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
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| DMTH6010SK3Q-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13.6A; Idm: 280A; 3.1W; TO252 Mounting: SMD Kind of package: 13 inch reel; tape Polarisation: unipolar On-state resistance: 8mΩ Drain current: 13.6A Drain-source voltage: 60V Case: TO252 Gate charge: 38.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 280A Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 3.1W |
товару немає в наявності |