Технічний опис DMTH6010SPS-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 10.4A; Idm: 400A; 2.6W, Case: PowerDI5060-8, Kind of channel: enhancement, Type of transistor: N-MOSFET, Mounting: SMD, Polarisation: unipolar, Drain-source voltage: 60V, Pulsed drain current: 400A, Drain current: 10.4A, Gate charge: 38.1nC, On-state resistance: 8mΩ, Power dissipation: 2.6W, Gate-source voltage: ±20V, Kind of package: 13 inch reel; tape.
Інші пропозиції DMTH6010SPS-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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DMTH6010SPS-13 | Виробник : Diodes Incorporated |
 MOSFET MOSFET BVDSS: 31V-40V |
товару немає в наявності |
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| DMTH6010SPS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10.4A; Idm: 400A; 2.6W Case: PowerDI5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Drain-source voltage: 60V Pulsed drain current: 400A Drain current: 10.4A Gate charge: 38.1nC On-state resistance: 8mΩ Power dissipation: 2.6W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
товару немає в наявності |