DMTH6012LPSW-13 Diodes Incorporated

Description: MOSFET N-CH 60V 11.5/50.5A PWRDI, Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerDI5060-8 (Type Q), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 2.8W (Ta), 53.6W (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).