DMTH6016LFDFW-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 9.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 1.06W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 30 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 3000+ | 18.08 грн |
| 6000+ | 16.08 грн |
| 9000+ | 15.40 грн |
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Технічний опис DMTH6016LFDFW-7 Diodes Incorporated
Description: MOSFET N-CH 60V 9.4A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V, Power Dissipation (Max): 1.06W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: U-DFN2020-6 (SWP) (Type F), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції DMTH6016LFDFW-7 за ціною від 16.11 грн до 74.52 грн
| Фото | Назва | Виробник | Інформація |
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DMTH6016LFDFW-7 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V U-DFN2020-6 T&R 3K |
на замовлення 6496 шт: термін постачання 21-30 дні (днів) |
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DMTH6016LFDFW-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 60V 9.4A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Power Dissipation (Max): 1.06W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (SWP) (Type F) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 14818 шт: термін постачання 21-31 дні (днів) |
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