Технічний опис DMTH6016LPDWQ-13 Diodes Zetex
Description: MOSFET BVDSS: 41V~60V POWERDI506, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W (Ta), 37.5W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V, Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8 (SWP), Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMTH6016LPDWQ-13
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DMTH6016LPDWQ-13 | Виробник : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta), 37.5W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (SWP) Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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DMTH6016LPDWQ-13 | Виробник : Diodes Incorporated |
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товару немає в наявності |