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DMTH61M8LPSQ-13

DMTH61M8LPSQ-13 Diodes Incorporated

DMTH61M8LPSQ.pdf
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8 (Type K)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Технічний опис DMTH61M8LPSQ-13 Diodes Incorporated

Description: MOSFET BVDSS: 41V~60V POWERDI506, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: PowerDI5060-8 (Type K), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 225A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).

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DMTH61M8LPSQ-13 DMTH61M8LPSQ-13 Diodes Incorporated DMTH61M8LPSQ.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V
Qualification: AEC-Q101
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DMTH61M8LPSQ-13 Diodes Incorporated DMTH61M8LPSQ.pdf MOSFET MOSFET BVDSS: 41V-60V PowerDI5060-8 T&R 2.5K
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В кошику  од. на суму  грн.
DMTH61M8LPSQ-13 DMTH61M8LPSQ.pdf
DMTH61M8LPSQ-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
DMTH61M8LPSQ-13 DMTH61M8LPSQ.pdf
Виробник: Diodes Incorporated
MOSFET MOSFET BVDSS: 41V-60V PowerDI5060-8 T&R 2.5K
товару немає в наявності
В кошику  од. на суму  грн.