DMTH69M8LFVWQ-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V-60V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 2000+ | 20.39 грн |
| 4000+ | 18.05 грн |
| 6000+ | 17.24 грн |
| 10000+ | 15.32 грн |
| 14000+ | 14.82 грн |
| 20000+ | 14.32 грн |
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Технічний опис DMTH69M8LFVWQ-7 Diodes Incorporated
Description: MOSFET BVDSS: 41V-60V POWERDI333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V, Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції DMTH69M8LFVWQ-7 за ціною від 20.20 грн до 78.33 грн
| Фото | Назва | Виробник | Інформація |
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DMTH69M8LFVWQ-7 | Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V 60V PowerDI3333-8/SWP T&R 2K |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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DMTH69M8LFVWQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V-60V POWERDI333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 149330 шт: термін постачання 21-31 дні (днів) |
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| DMTH69M8LFVWQ-7 |
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Виробник: Diodes Incorporated
MOSFET MOSFET BVDSS: 41V 60V PowerDI3333-8/SWP T&R 2K
MOSFET MOSFET BVDSS: 41V 60V PowerDI3333-8/SWP T&R 2K
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.71 грн |
| 10+ | 52.73 грн |
| 100+ | 35.66 грн |
| 250+ | 34.60 грн |
| DMTH69M8LFVWQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V-60V POWERDI333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 41V-60V POWERDI333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
на замовлення 149330 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 78.33 грн |
| 10+ | 46.93 грн |
| 100+ | 30.74 грн |
| 500+ | 22.31 грн |
| 1000+ | 20.20 грн |