DMTH8001STLWQ-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V POWERDI10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: POWERDI1012-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 193.71 грн |
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Технічний опис DMTH8001STLWQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI10, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 270A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V, Power Dissipation (Max): 6W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: POWERDI1012-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMTH8001STLWQ-13 за ціною від 180.42 грн до 436.83 грн
| Фото | Назва | Виробник | Інформація |
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DMTH8001STLWQ-13 | Виробник : Diodes Zetex |
Diodes Incorporated offers a portfolio of automotive MOSFETs packaged in the space saving, thermally efficient TOLL (PD1012S) package. |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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DMTH8001STLWQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI10 Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V Power Dissipation (Max): 6W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: POWERDI1012-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10513 шт: термін постачання 21-31 дні (днів) |
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DMTH8001STLWQ-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 61V~100V PowerDI1012-8 T&R 1.5K |
на замовлення 1685 шт: термін постачання 21-30 дні (днів) |
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DMTH8001STLWQ-13 | Виробник : Diodes Zetex |
Diodes Incorporated offers a portfolio of automotive MOSFETs packaged in the space saving, thermally efficient TOLL (PD1012S) package. |
товару немає в наявності |
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| DMTH8001STLWQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 270A; Idm: 1080A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 270A Pulsed drain current: 1.08kA Power dissipation: 250W Case: PowerDI1012-8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 138nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |