DMTH8008LFGQ-7 Diodes Incorporated
на замовлення 1463 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 139.15 грн |
| 10+ | 93.52 грн |
| 100+ | 55.22 грн |
| 500+ | 43.76 грн |
| 1000+ | 40.74 грн |
| 2000+ | 38.03 грн |
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Технічний опис DMTH8008LFGQ-7 Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 70A (Tc), Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V, Power Dissipation (Max): 1.2W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: PowerDI3333-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V, Qualification: AEC-Q101.
Інші пропозиції DMTH8008LFGQ-7 за ціною від 39.98 грн до 139.91 грн
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DMTH8008LFGQ-7 | Виробник : Diodes Incorporated |
 Description: MOSFET BVDSS: 61V~100V POWERDI33Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Power Dissipation (Max): 1.2W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1130 шт: термін постачання 21-31 дні (днів) |
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DMTH8008LFGQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Power Dissipation (Max): 1.2W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |